By O. Madelung (Eds.)
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Extra resources for Advances in Solid State Physics. Festk–rper Probleme, Volume 10
The sample resistivity was in the range from 4 s 10 to 1 0 Ω cm. The main reasons for the difference between experimental and theoretical results are probably crystal non-uniformities and other crystal imperfections, besides the influence of free carrier trapping and amplified noise signals. The two last mentioned effects will be discussed in detail later. TRANSDUCER DRIFT FIELD PULSE - BUFFER CdS LIGHT BUFFER TRANSDUCER RF OUTPUT- ATTENUATOR Fig. 4. Schematic illustration of experimental set-up for measuring sound amplification in photoconducting CdS.
The agreement with the results of McFee and Tien (Fig. 3) is seen to be rather good. The same crystal data have been used to calculated the I—V characteristic from the sfcc-model as shown in Fig. 5. In the case of short samples, the I - V characteristics depend strongly upon the 1 1 9 sample length. This is illustrated by the experimental curves ( ) in Fig. 6 where ( J / J s ) vs. (V/V s ) has been plotted for a 200 Ω cm, Cu-doped ZnO crystal in the transverse configuration. The synchroneous current J s has been determined as the saturation current for very long crystals, from which also the mobility 2 μ = 120 c m /V sec was obtained.
The velocity ratio 2 10 on the right side is approximately ( v s / v L ) « 1 0 " . 36) where π is a unit vector along the direction of acoustic polarization and Si is a scalar "strain amplitude", also varying as exp [j(k s . γ- ωΐ ) ] . Now, for given values of ω , κ and π we shall determine the complex wave-number k s = ~ + j a e by solving the basic equations: Ty = Cfld Sk! 40) Ji = q ( n ! + n 0 ) M i j E j + q D n j ij — ( n i ) . 42) (With summation over repeated subscripts). These equations are of course generalized versions of eqs.
Advances in Solid State Physics. Festk–rper Probleme, Volume 10 by O. Madelung (Eds.)